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Product overview

Part Number
QPD1015L
Manufacturer
Qorvo
Stock
283
Product Category
Wireless & RF Semiconductors
Description
RF JFET Transistors DC-3.7GHz 65W 50V SSG 20dB GaN
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Description
Products Description

Product Attributes

Gain :
20 dB
Id - Continuous Drain Current :
2.5 A
Maximum Operating Temperature :
+ 85 C
Minimum Operating Temperature :
- 40 C
Mounting Style :
Screw Mount
Operating Frequency :
3.7 GHz
Output Power :
70 W
Package / Case :
NI-360
Packaging :
Tray
Pd - Power Dissipation :
64 W
Technology :
GaN-on-SiC
Transistor Polarity :
N-Channel
Transistor Type :
HEMT
Vds - Drain-Source Breakdown Voltage :
50 V
Vgs - Gate-Source Breakdown Voltage :
145 V

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