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Product overview

Part Number
QPD1000
Manufacturer
Qorvo
Stock
480
Product Category
Wireless & RF Semiconductors
Description
RF JFET Transistors 50-1000MHz 15W 28V SSG 19dB GaN
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Description
Products Description

Product Attributes

Gain :
19 dB
Id - Continuous Drain Current :
817 mA
Maximum Operating Temperature :
+ 85 C
Minimum Operating Temperature :
- 40 C
Mounting Style :
SMD/SMT
Operating Frequency :
30 MHz to 1.215 GHz
Output Power :
24 W
Package / Case :
QFN-8
Packaging :
Tray
Pd - Power Dissipation :
28.8 W
Technology :
GaN-on-SiC
Transistor Polarity :
N-Channel
Transistor Type :
HEMT
Vds - Drain-Source Breakdown Voltage :
28 V
Vgs - Gate-Source Breakdown Voltage :
100 V

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