Description
Products Description
Product Attributes
- Gain :
- 17.1 dB
- Id - Continuous Drain Current :
- 557 mA
- Mounting Style :
- SMD/SMT
- Operating Frequency :
- 0.03 GHz to 3 GHz
- Output Power :
- 11 W
- Package / Case :
- QFN-EP-16
- Packaging :
- Tray
- Pd - Power Dissipation :
- 15.3 W
- Technology :
- GaN-on-SiC
- Transistor Polarity :
- N-Channel
- Transistor Type :
- HEMT
- Vds - Drain-Source Breakdown Voltage :
- 32 V
- Vgs - Gate-Source Breakdown Voltage :
- - 2.7 V
