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Product overview

Part Number
T1G4012036-FL
Manufacturer
Qorvo
Stock
606
Product Category
Wireless & RF Semiconductors
Description
RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
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Description
Products Description

Product Attributes

Gain :
18.4 dB
Id - Continuous Drain Current :
12 A
Maximum Drain Gate Voltage :
- 2.9 V
Mounting Style :
SMD/SMT
Operating Frequency :
3.3 GHz
Output Power :
24 W
Package / Case :
NI-360
Packaging :
Tray
Pd - Power Dissipation :
117 W
Technology :
GaN-on-SiC
Transistor Polarity :
N-Channel
Transistor Type :
HEMT
Vds - Drain-Source Breakdown Voltage :
36 V

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