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Product overview

Part Number
A3G35H100-04SR3
Manufacturer
NXP Semiconductors
Stock
769
Product Category
Wireless & RF Semiconductors
Description
RF MOSFET Transistors Airfast RF Power GaN Transistor, 3400-3600 MHz, 14 W Avg., 48 V
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Description
Products Description

Product Attributes

Gain :
14 dB
Id - Continuous Drain Current :
8.04 mA
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Operating Frequency :
3400 MHz to 3600 MHz
Output Power :
14 W
Package / Case :
NI-780S-4L
Packaging :
Cut Tape, Reel
Technology :
GaN-on-Si
Transistor Polarity :
Dual N-Channel
Vds - Drain-Source Breakdown Voltage :
125 V

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