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Product overview

Part Number
MRFX600GSR5
Manufacturer
NXP Semiconductors
Stock
191
Product Category
Wireless & RF Semiconductors
Description
RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 600 W CW over 1.8-400 MHz, 65 V
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Description
Products Description

Product Attributes

Gain :
26.4 dB
Id - Continuous Drain Current :
32 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 40 C
Mounting Style :
SMD/SMT
Operating Frequency :
1.8 MHz to 400 MHz
Output Power :
600 W
Package / Case :
NI-780GS-4L
Packaging :
Cut Tape, Reel
Technology :
SI
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
193 V

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