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Product overview

Part Number
QPD1011SR
Manufacturer
Qorvo
Stock
138
Product Category
Wireless & RF Semiconductors
Description
RF JFET Transistors .03-1.2GHz 7W 50V GaN
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Description
Products Description

Product Attributes

Gain :
21 dB
Id - Continuous Drain Current :
1.46 A
Maximum Drain Gate Voltage :
55 V
Maximum Operating Temperature :
+ 85 C
Minimum Operating Temperature :
- 40 C
Mounting Style :
SMD/SMT
Operating Frequency :
30 MHz to 1200 MHz
Output Power :
8.7 W
Package / Case :
SMD-8
Packaging :
Reel
Pd - Power Dissipation :
13 W
Technology :
GaN-on-SiC
Transistor Polarity :
N-Channel
Transistor Type :
HEMT
Vds - Drain-Source Breakdown Voltage :
50 V
Vgs - Gate-Source Breakdown Voltage :
145 V

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