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Product overview

Part Number
TP65H070LDG-TR
Manufacturer
Transphorm
Stock
547
Product Category
Wireless & RF Semiconductors
Description
RF JFET Transistors 227-TP65H070LSG-TR
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Description
Products Description

Product Attributes

Id - Continuous Drain Current :
25 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Package / Case :
PQFN-8
Packaging :
Reel
Pd - Power Dissipation :
96 W
Technology :
GaN
Transistor Polarity :
N-Channel
Transistor Type :
HEMT
Vds - Drain-Source Breakdown Voltage :
650 V
Vgs - Gate-Source Breakdown Voltage :
- 20 V, + 20 V

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