Description
Products Description
Product Attributes
- Gain :
- 17.7 dB
- Id - Continuous Drain Current :
- 15 A
- Maximum Drain Gate Voltage :
- 55 V
- Maximum Operating Temperature :
- + 85 C
- Minimum Operating Temperature :
- - 40 C
- Mounting Style :
- SMD/SMT
- Operating Frequency :
- 2.7 GHz to 3.1 GHz
- Package / Case :
- 17.4 mm x 24 mm x 4.31 mm
- Pd - Power Dissipation :
- 522 W
- Technology :
- GaN-on-SiC
- Transistor Polarity :
- N-Channel
- Transistor Type :
- HEMT
- Vds - Drain-Source Breakdown Voltage :
- 145 V
- Vgs - Gate-Source Breakdown Voltage :
- - 7 V to 2 V
