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Product overview

Part Number
NPT1012B
Manufacturer
MACOM
Stock
817
Product Category
Wireless & RF Semiconductors
Description
RF JFET Transistors DC-4.0GHz P1dB 43dBm Gain 13dB GaN
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Description
Products Description

Product Attributes

Gain :
13 dB
Id - Continuous Drain Current :
4 mA
Maximum Operating Temperature :
+ 200 C
Mounting Style :
Screw Mount
Operating Frequency :
4 GHz
Packaging :
Tray
Pd - Power Dissipation :
44 W
Technology :
GaN-on-Si
Transistor Polarity :
N-Channel
Transistor Type :
HEMT
Vds - Drain-Source Breakdown Voltage :
100 V
Vgs - Gate-Source Breakdown Voltage :
3 V

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