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Product overview

Part Number
QPD1022SR
Manufacturer
Qorvo
Stock
816
Product Category
Wireless & RF Semiconductors
Description
RF JFET Transistors DC-12GHz 10W 32V GaN
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Description
Products Description

Product Attributes

Gain :
24 dB
Id - Continuous Drain Current :
610 mA
Maximum Operating Temperature :
+ 85 C
Minimum Operating Temperature :
- 40 C
Mounting Style :
SMD/SMT
Operating Frequency :
DC to 12 GHz
Output Power :
10 W
Package / Case :
QFN-16
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
13.8 W
Technology :
GaN-on-SiC
Transistor Polarity :
N-Channel
Transistor Type :
HEMT
Vds - Drain-Source Breakdown Voltage :
32 V
Vgs - Gate-Source Breakdown Voltage :
- 2.8 V

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