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Product overview

Part Number
QPD1003
Manufacturer
Qorvo
Stock
342
Product Category
Wireless & RF Semiconductors
Description
RF JFET Transistors 1.2-1.4GHz 500W 50V SSG 20dB GaN
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Description
Products Description

Product Attributes

Gain :
19.9 dB
Id - Continuous Drain Current :
15 A
Maximum Operating Temperature :
+ 85 C
Minimum Operating Temperature :
- 40 C
Mounting Style :
SMD/SMT
Operating Frequency :
1.2 GHz to 1.4 GHz
Output Power :
540 W
Package / Case :
RF-565
Packaging :
Tray
Pd - Power Dissipation :
370 W
Technology :
GaN-on-SiC
Transistor Polarity :
N-Channel
Transistor Type :
HEMT
Vds - Drain-Source Breakdown Voltage :
50 V
Vgs - Gate-Source Breakdown Voltage :
145 V

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