Description
Products Description
Product Attributes
- Gain :
- 15 dB
- Id - Continuous Drain Current :
- 650 mA
- Maximum Drain Gate Voltage :
- -
- Mounting Style :
- SMD/SMT
- Operating Frequency :
- DC to 6 GHz
- Output Power :
- 10 W
- Package / Case :
- NI-200
- Packaging :
- Tray
- Pd - Power Dissipation :
- 12.5 W
- Technology :
- GaN-on-SiC
- Transistor Polarity :
- N-Channel
- Transistor Type :
- HEMT
- Vds - Drain-Source Breakdown Voltage :
- -
- Vgs - Gate-Source Breakdown Voltage :
- -
