Welcome to Zhuoste Technology Co., Ltd.

Email

Contact@zhuoste.com

WhatsApp

+85254872607

Product overview

Part Number
NPT2021
Manufacturer
MACOM
Stock
397
Product Category
Wireless & RF Semiconductors
Description
RF JFET Transistors DC-2.5GHz 45W Gain 16.5dB GaN HEMT
Send Inquiry
Description
Products Description

Product Attributes

Gain :
14.2 dB
Id - Continuous Drain Current :
14 mA
Maximum Operating Temperature :
+ 85 C
Minimum Operating Temperature :
- 40 C
Mounting Style :
Screw Mount
Operating Frequency :
2.5 GHz
Output Power :
45 W
Package / Case :
TO-272
Packaging :
Tray
Technology :
GaN-on-Si
Transistor Polarity :
N-Channel
Transistor Type :
HEMT
Vds - Drain-Source Breakdown Voltage :
160 V
Vgs - Gate-Source Breakdown Voltage :
3 V

leave a message


leave a message