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Product overview

Part Number
NPT2022
Manufacturer
MACOM
Stock
799
Product Category
Wireless & RF Semiconductors
Description
RF JFET Transistors DC-2.0GHz 100W Gain 20dB GaN HEMT
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Description
Products Description

Product Attributes

Gain :
21 dB
Id - Continuous Drain Current :
24 mA
Maximum Operating Temperature :
+ 85 C
Minimum Operating Temperature :
- 40 C
Mounting Style :
Screw Mount
Operating Frequency :
2 GHz
Output Power :
100 W
Packaging :
Tray
Technology :
GaN-on-Si
Transistor Polarity :
N-Channel
Transistor Type :
HEMT
Vds - Drain-Source Breakdown Voltage :
160 V
Vgs - Gate-Source Breakdown Voltage :
3 V

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