Description
Products Description
Product Attributes
- Gain :
- -
- Id - Continuous Drain Current :
- -
- Maximum Drain Gate Voltage :
- -
- Mounting Style :
- SMD/SMT
- Operating Frequency :
- 4 GHz
- Output Power :
- 320 W
- Package / Case :
- Die
- Packaging :
- Gel Pack
- Pd - Power Dissipation :
- -
- Technology :
- GaN
- Transistor Polarity :
- N-Channel
- Transistor Type :
- HEMT
- Vds - Drain-Source Breakdown Voltage :
- 50 V
- Vgs - Gate-Source Breakdown Voltage :
- -
