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Product overview

Part Number
CG2H30070F
Manufacturer
Wolfspeed / Cree
Stock
493
Product Category
Wireless & RF Semiconductors
Description
RF JFET Transistors GaN HEMT DC-2.0GHz, 60 Watt
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Description
Products Description

Product Attributes

Gain :
12.4 dB
Id - Continuous Drain Current :
12 A
Maximum Drain Gate Voltage :
-
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 40 C
Mounting Style :
Screw Mount
Operating Frequency :
0.5 GHz to 3 GHz
Output Power :
70 W
Package / Case :
440224
Packaging :
Tray
Pd - Power Dissipation :
-
Technology :
GaN
Transistor Polarity :
N-Channel
Transistor Type :
HEMT
Vds - Drain-Source Breakdown Voltage :
120 V
Vgs - Gate-Source Breakdown Voltage :
- 10 V, 2 V

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