Description
Products Description
Product Attributes
- Gain :
- 22.9 dB
- Id - Continuous Drain Current :
- 28 A
- Maximum Drain Gate Voltage :
- 225 V
- Maximum Operating Temperature :
- + 85 C
- Minimum Operating Temperature :
- - 40 C
- Mounting Style :
- SMD/SMT
- Operating Frequency :
- 1 GHz to 1.1 GHz
- Output Power :
- 1.5 kW
- Package / Case :
- NI-1230-4
- Packaging :
- Tray
- Pd - Power Dissipation :
- 758 W
- Technology :
- GaN-on-SiC
- Transistor Type :
- HEMT
