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Product overview

Part Number
MT3S113TU,LF
Manufacturer
Toshiba
Stock
777
Product Category
Wireless & RF Semiconductors
Description
RF Bipolar Transistors RF Bipolar Transistor .1A 900mW
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Description
Products Description

Product Attributes

Collector- Emitter Voltage VCEO Max :
5.3 V
Configuration :
Single
Continuous Collector Current :
100 mA
DC Collector/Base Gain hfe Min :
200
Emitter- Base Voltage VEBO :
0.6 V
Maximum Operating Temperature :
+ 150 C
Mounting Style :
SMD/SMT
Operating Frequency :
11.2 GHz
Package / Case :
UFM-3
Packaging :
Cut Tape, Reel
Series :
MT3S113TU
Technology :
SiGe
Transistor Polarity :
NPN
Transistor Type :
Bipolar

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